Memristive devices

Amorphous Ti oxide nanocavities[1] were used as a platform to fabricate memristor devices. Fully conformal Pt/TiO2 interdigitated architectures were produced by sputter coating the oxide cavities with nm thick Pt films.[2] We identified key aspects enabling reliable switching functionalities in Pt/TiO2/Ti devices i.e. (i) a high degree of ordering of the TiO2 cavity arrays, (ii) a sufficiently low aspect ratio of the cavity to achieve a conformal Pt top contact sputter-deposition, and (iii) a high density of oxygen vacancies in the oxide cavity bottoms.

Some literature citations:
[1] J. E. Yoo, K. Lee, M. Altomare, E. Selli, P. Schmuki, Angew. Chemie Int. Ed. 2013, 52, 7514.
[2] J. E. Yoo, K. Lee, A. Tighineanu, P. Schmuki, Electrochem. commun. 2013, 34, 177.